2010. 1. 18 1/4 semiconductor technical data KU2751K n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter. features v dss =30v, i d =52a. low drain to source on-state resistance. : r ds(on) =11m ? (max.) @ v gs =10v : r ds(on) =15m ? (max.) @ v gs =4.5v maximum rating (ta=25 unless otherwise noted) psop-8 dim millimeters a b d d1 c e e1 e2 1,2,3 : source 4 : gate 5,6,7,8 : drain h d e b e l1 e1 he2 k l d1 e 0.41+0.10/-0.08 1.27 bsc 1.10 min 3.81+0.15/-0.20 k l l1 1.00 0.10 + _ 0.25 0.05 + _ 4.90 0.10 + _ 6.00 0.10 + _ 5.75 0.05 + _ 3.58 0.20 + _ 0.51 0.10 + _ 0.61 0.10 + _ 0.13 0.07 + _ a c 0 ~ 12 5 8 4 1 8 5 1 4 note 1) r thjc means that the infinite heat sink is mounted. note 2) surface mounted on 1 ? 1 ? pad of 2 oz copper. note 3) l=78.5 h, i as =52a, v dd =15v, v gs =10v, starting t j =25 characteristic symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current dc@t c =25 (note1) i d 52 a pulsed (note2) i dp 208 single pulsed avalanche energy (note3) e as 170 mj drain power dissipation @t c =25 (note1) p d 54 w @ta=25 (note2) 2.5 maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to case (note1) r thjc 2.3 /w thermal resistance, junction to ambient (note2) r thja 50 /w pin connection (top view) d dddd sssg d d d s s s g marking ku2751 k type name lot no
2010. 1. 18 2/4 KU2751K revision no : 0 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 30 - - v drain cut-off current i dss v gs =0v, v ds =30v - - 1 a gate to source leakage current i gss v gs = 20v, v ds =0v - - 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain to source on resistance r ds(on) v gs =10v, i d =20a (note4) - 9.2 11.0 m ? v gs =4.5v, i d =20a (note4) - 12.5 15.0 forward transconductance g fs v ds =5v, i d =20a (note4) - 43 - s dynamic input capacitance c iss v ds =15v, f=1mhz, v gs =0v - 777 - pf ouput capacitance c oss - 271 - reverse transfer capacitance c rss - 74 - gate resistance r g f=1mhz - 1.0 - ? total gate charge v gs =10v q g v ds =15v, v gs =10v, i d =20a (note4) - 12.5 - nc v gs =4.5v q g - 6.8 - gate to source charge q gs - 2.4 - gate to drain charge q gd - 2.2 - turn-on delay time t d(on) v dd =15v, v gs =10v i d =20a, r g =1.6 (note4) - 7.0 - ns turn-on rise time t r - 2.9 - turn-off delay time t d(off) - 21.0 - turn-off fall time t f - 2.6 - source to drain diode ratings source to drain forward voltage v sd v gs =0v, i s =20a (note4) - 0.8 1.2 v reverse recovery time t rr i s =20a, di/dt=100a/ s (note4) - 18.0 - ns reverse recovered charge q rr i s =20a, di/dt=100a/ s (note4) - 7.5 - nc note 4) pulse test : pulse width <300 , duty cycle < 2%
2010. 1. 18 3/4 KU2751K revision no : 0 0 12 16 4 8 20 50 0102 03040 drain current i d (a) drain to source on resistance r ds(on) (m ? ) fig2. r ds(on) - i d gate to source voltage v gs (v) 10 30 0 20 50 40 3 012 5 4 fig3. i d - v gs drain current i d (a) fig4. r ds(on) - t j -75 -50 -25 25 50 75 175 150 125 100 0 normalized gate to source threshold voltage fig5. v th - t j -75 -50 -25 0.4 0.6 0.2 1.6 0.8 1.0 1.4 1.2 0.6 0.8 0 0.2 0.4 1.0 1.2 2.0 1.6 1.4 1.8 050100 25 175 150 125 75 normalized on resistance r ds(on) junction temperature tj ( ) c junction temperature tj ( ) c v ds = v gs, i d = 250 a v ds = 5v t j =25 c t j =-55 c t j =150 c v gs =10v, i d =20a v gs =4.5v, i d =20a v gs =4.5v v gs =10v fig6. i s - v sd reverse drain current i s (a) 10 -1 10 0 10 1 10 2 0.6 1.2 1.0 0.4 0.8 0.2 source to drain voltage v sd (v) t j =25 c t j =-55 c t j =150 c fig1. i d - v ds drain to source voltage v ds (v) 0 0.5 1.0 1.5 0 20 40 10 30 50 2.5 2.0 3.0 drain current i d (a) 3.5v 4.5v 4.0v 10v 5v v gs =3.0v
2010. 1. 18 4/4 KU2751K revision no : 0 drain to source voltage v ds (v) capacitance c (pf) fig8. c - v ds 25 10 15 05 20 30 gate to charge q g (nc) 0 10 6 2 4 8 12 369 015 fig9. q g - v gs gate to source voltage v gs (v) v ds = 15v, i d = 20a gate to source voltage v gs (v) fig7. r ds(on) - v gs 6 024 8 12 10 0 10 50 30 40 20 drain to source on resistance r ds(on) (m ? ) t j =150 c i d =20a f=1mhz t j =25 c drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area r d s (o n ) limit square wave pulse duration t w (sec) 10 1 10 0 10 1 10 -3 10 -2 10 -1 10 0 10 -4 fig11. transient thermal response curve 10 -1 10 -2 normalized effective transient thermal resistance t 1 t 2 p dm r thjc =2.14 c/w 0.02 0.1 0.01 0.2 0.5 0.05 v gs = 10v single pulse t c = 25 c 10 -2 10 -1 10 -1 10 0 10 0 10 1 10 1 10 2 10 2 10 3 single pulse c oss c rss c iss dc 10ms 1ms 100us 10 1 10 2 10 3 10 4
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